Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Symposium on Semiconductor Process Integration (12. : 2021 : Online) Semiconductor Process Integration 12
1. Verfasser:	Higashi, S. (VerfasserIn)
Weitere Verfasser:	Matsuguchi, K. (VerfasserIn), Sato, T. (VerfasserIn), Hanafusa, H. (VerfasserIn)
Pages:	12
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2021
Schlagworte:
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Bestellen

Titel	Jahr	Verfasser
Impact of Processing Factors on the Low-Frequency Noise of Gate-All-Around Silicon Vertical Nanowire FETs	2021	Simoen, E.
Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV	2021	Zhang, Y.
Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)	2021	Higashi, S.
Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films	2021	Kurosawa, M.
Modeling of Advanced FinFET Dummy Gate Corner Residue Impacted By Clogging	2021	Xiao, X.
Process Development of Dislocation-Free SiGe P-Channel in FinFET Technology	2021	Su, B.
Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures	2021	Sawada, T.
Selective Epitaxy of Submicron Ge Wire Structures for Photodetectors and Optical Modulators in Si Photonics	2021	Ishikawa, Y.
Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1-XO2-Based Metal-Ferroelectric Semiconductor	2021	Onaya, T.
Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate	2021	Nagase, M.
Two-Dimensional Characterization of Wide-Bandgap Materials and Contact Interfaces by Using Scanning Internal Photoemission Microscopy	2021	Shiojima, K.
Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots	2021	Miyazaki, S.
Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers	2021	Rengo, G.
Single-Electron Manipulation in an Attofarad-Capacitor DRAM	2021	Nishiguchi, K.
HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications	2021	Takagi, S.
A Highly Sensitive MEMS Accelerometer Module for Measuring Micro Muscular Sounds	2021	Ito, H.
Nanoscale Probing of Field-Driven Ion Migration in TaOx for Neuromorphic Memristor Applications	2021	Tsurumaki-Fukuchi, A.
Study of HfO2-Based High-k Gate Insulators for GaN Power Device	2021	Nabatame, T.
Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts	2021	Hikavyy, A. Y.
Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications	2021	Yamamoto, K.

Alle Artikel auflisten