Impact of the Post-Anneal Procedure on the Dierectric Responce of the BST Capacitors

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (56 : 1999 : Osaka) 56.-Handōtai-Shuseki-Kairo-Gijutsu-Shinpojiumu-kōen-ronbunshū
1. Verfasser: Okudaira, T. (VerfasserIn)
Weitere Verfasser: Yutani, A. (VerfasserIn), Fujita, Y. (VerfasserIn), Kashihara, K. (VerfasserIn), Tsunemine, Y. (VerfasserIn), Itoh, H. (VerfasserIn), Nishimura, T. (VerfasserIn)
Pages:56
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1999
Schlagworte:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Titel Jahr Verfasser
High Performance & Highly Reliable Deep Submicron CMOS-FETs Using Nitrided-Oxide 1999 Irino, K.
Issues in 0.13 µm CMOS Device Design 1999 Nakamae, M.
Analysis of Radiation Tolerance in Field-Shield-Isolated SOI MOSFETs 1999 Hirano, Y.
Effects of NHs Addition on the Improving Step Coverage of MOCVD-TiN Films using TDEAT 1999 Tobe, R.
Towards LSI’s in the Year 2010 — From the Design Viewpoint 1999 Sakurai, T.
A New Slurry-free Cu CMP for Interconnects 1999 Matsumoto, M.
SAC Technology for DRAM Cell 1999 Sakao, M.
Impact of the Post-Anneal Procedure on the Dierectric Responce of the BST Capacitors 1999 Okudaira, T.
Interconnect Technology Needs for the Next Millennium 1999 Havemann, R. H.
Organic Low-k Dual Damscene Structure Fabricated by a Novel Clustered Hard Mask Processing 1999 Tamaoka, E.
Precise Etching of a Polymetal Gate Structure for 0.13 µm Device 1999 Kawashima, A.
Evaluation of Plasma-Induced Damages to Thin Oxides During Polysilicon Gate Etching in Gas-Puff Chlorine Plasmas 1999 Tomohisa, S.
1M-bit Ferroelectric Memory (FeRAM) Technology with Double-level Metal Layers 1999 Kunishima, I.
Transıent Enhanced Diffusion of As and Redistribution of B in As-Implanted Silicon 1999 Kim, R.
Fundamental and Application of Fine Plating on ULSI Interconnection Technology 1999 Osaka, T.
Copper Plating Technology for Sub-Quarter Micron Via Filling 1999 Higaki, Y.
Stability of Low-k Dielectric Materials against Back End Process 1999 Inoue, Y.
Study on the Effects of Chemical and Mechanical Factors on Surface Characteristies in CMP 1999 Watanabe, J.
Low-Resistivity W/WSiN/poly-Si “Polymetal” Gate Electrode Technology 1999 Akasaka, Y.
Electromigration Reliability of Cu Interconnects 1999 Shingubara, S.
Alle Artikel auflisten