The Current Status of SOI Wafer Technology and its Future Prospect

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Veröffentlicht in:Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (68 : 2005 : Kyōto) Handōtai, Shuseki-Kairo-Gijutsu-68.-Shinpojiumu-kōen-ronbunshū
1. Verfasser: Yoshimi, M. (VerfasserIn)
Pages:68
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2005
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Titel Jahr Verfasser
Development of High Stress SiN Films for Use with Strained Silicons Technologies 2005 Varadarajan, B.
Chemical Dry Cleaning Technology for Reliable 65nm CMOS Contact to NiSix 2005 Honda, M.
Non-Porous Low-k Fluorocarbon Films for 45nm Generation Formed by Very Low Electron Temperature Plasma 2005 Miyatani, K.
Structure Characterization of SiOC Film Using Solid-State NMR Spectroscopy 2005 Miyoshi, R.
Novel Ultra Low-k Borazinic Films Prepared by PECVD 2005 Kumada, T.
Robust Cu Dual-Damascene Interconnect Technology Using High-Diffusive Dopant from Cu-Alloy Seed Layer 2005 Tonegawa, T.
Sub-10-nm Planar-Bulk-CMOS Device Properties 2005 Wakabayashi, H.
The Current Status of SOI Wafer Technology and its Future Prospect 2005 Yoshimi, M.
Challenge of Low-k Materials for 65nm Mode Interconnect Technology and Beyond 2005 Miyajima, H.
Nano-scale Stress Analysis in Dielectric Films with Cu Interconnects Using Cathodoluminescence Spectroscopy 2005 Kakinuma, S.
Evaluation of nm-order Structures of Low-k Films by TEM Correlated with Cu/Low-k Processes 2005 Ogawa, S.
Development of Resist Planarization Process for Cu/Low-k Dual Damascene 2005 Shigeta, A.
Improvement in Reliability of Cu Dual-Damascene Interconnects Using CuAl Alloy Seed 2005 Maekawa, K.
SOI-CMOS Device Technology for High Speed and Low Power Consumption LSI 2005 Ipposhi, T.
Characteristics of PVD-HfO2 with Poly-Si and Fully Silicided Gates 2005 Hayashi, S.
Electro-Chemical Mechanical Planarization using Conductive Polishing Pad 2005 Kondo, S.
A Novel Strain Enhanced CMOS Architecture Using Selectively Deposited High Tensile And High Compressive Nitride Films 2005 Pidin, S.
Characterization of The Electrical and Chemical Structure of a HfSiON Film 2005 Yamamoto, T.
Development of Fully Silicided Gate Technology in Metal/High-k MOSFETs 2005 Nabatame, T.
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