Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon- Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy

Evaluation of Anisotropic Biaxial Stress in Extremely-Thin Body (100) Silicon- Germanium-on-Insulator p-Type Metal-Oxide-Semiconductor Field-Effect-Transistor by Oil-Immersion Raman Spectroscopy

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Veröffentlicht in:Symposium "Semiconductor Process Integration" (13. : 2023 : Göteborg) Semiconductor Process Integration 13
1. Verfasser: Maeda, Y. (VerfasserIn)
Weitere Verfasser: Yokogawa, R. (VerfasserIn), Sugawa, S. (VerfasserIn), Chen, C. T. (VerfasserIn), Toprasertpong, K. (VerfasserIn), Takenaka, M. (VerfasserIn), Takagi, S. (VerfasserIn), Ogura, A. (VerfasserIn)
Pages:13
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2023
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