Erectrochemical Deposition for Damascene Copper Interconnect

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Veröffentlicht in:Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (54 : 1998 : Tokio) 54. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū
1. Verfasser: Yamashita, Y. (VerfasserIn)
Pages:54
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 1998
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Titel Jahr Verfasser
Recent Technologies for (Ba,Sr)TiO3 Thin Film Capacitors 1998 Kato, Y.
Erectrochemical Deposition for Damascene Copper Interconnect 1998 Yamashita, Y.
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Properties of Ta2 O5 Capacıtor Deposited on Ru Electrode Electric 1998 Kishiro, K.
MOCVD Source for Pt Group Metal Electrode 1998 Uchida, H.
Electrical Characteristics of Extremely Thin SrTiO3 Films on Ru Electrodes Prepared by Chemical Vapor Deposition 1998 Kiyotoshi, M.
Novel Application of Conductive Oxides to Memory Devices 1998 Hiratani, M.
Current Status and Challenges for Copper Interconnect Technology 1998 Nogami, T.
Cleaning of Cu Contaminant in Cu Interconnection by Chemical Spin Etching 1998 Hara, T.
Electro-migration in Cu Interconnects for Various Barrier Materials 1998 Hirao, S.
The View of Ta2 O5 Capacitor for Advanced Future Devices 1998 Tsukune, A.
First-Principles Approach to the Effect of In-Plane Strain on the Ferroelectric Properties of BaTiO3 Thin Films 1998 Schimizu, T.
Electrical Properties of BST Thin Film Capacitors Formed on in-situ O-doped Pt Electrodes 1998 Okudaira, T.
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Integration and Film Properties of Arylenetherpolymer (FLARE) 1998 Nakano, T.
Fluorinated Low Dielectric Constant Polyimides by Vapor Deposition Polymerization 1998 Ukishima, S.
Dielectric Constant of SiO2 Films Deposited by TICS/H2O CVD 1998 Sugiura, O.
Sub-100nm Pattern Formation using Ozone Asher 1998 Kawakami, H.
Novel Low-Dielectrie-Constant Inter Layer Dielectrics 1998 Kuroki, M.
CVD Cu Interconnect Technology 1998 Ueno, K.
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