An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge

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Veröffentlicht in:	Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Peking) Semiconductors: silicon carbide and related materials
1. Verfasser:	Tian, K. (VerfasserIn)
Weitere Verfasser:	Xia, J. H. (VerfasserIn), Qi, J. W. (VerfasserIn), Ma, S. H. (VerfasserIn), Yang, F. (VerfasserIn), Zhang, A. P. (VerfasserIn)
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2019
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