Development of a High-Speed Switching Silicon Carbide Power Module

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018
1. Verfasser: Sato, S. (VerfasserIn)
Weitere Verfasser: Kato, F. (VerfasserIn), Tanisawa, H. (VerfasserIn), Koui, K. (VerfasserIn), Watanabe, K. (VerfasserIn), Murakami, Y. (VerfasserIn), Kobayashi, Y. (VerfasserIn), Sato, H. (VerfasserIn), Yamaguchi, H. (VerfasserIn), Harada, S. (VerfasserIn)
Pages:2018
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2019
Schlagworte:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Titel Jahr Verfasser
Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules 2019 Hsiao, J. Steiner, M. Arzig, T. C.
Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth 2019 Lee, J. W. Choi, J. G. Kim, B. K. Jang, S. K. Ko, M. O. Kyun, J. D. Seo, K. R. Ku, C. Y.
A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials 2019 Bathey, P. S. Raghavan. R. Drachev. B.
Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth 2019 Seki, K. Kawaguchi, K.
Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition 2019 Ishii, Y. Daigo, A. Ishiguro, S.
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling 2019 Mochizuki, K.
Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique 2019 Savtchouk, A.
Atomic Coordination Analysis of Nitrogen Introduced in SiO2/SiC Interface and SiO2 Layer by XAFS Measurement 2019 Kunisu, M.
Si02/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements 2019 Fiorenza, P.
Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope 2019 Kamata, I.
Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method 2019 Hattori, R.
Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC 2019 Knoll, L.
Thermal Annealing of High Dose P Implantation in 4H-SiC 2019 Calabretta, C.
Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region 2019 Mochizuki, K.
1300°C Annealing of 1x102° AI" Ion Implanted 3C-SiC 2019 Nipoti, R.
Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations 2019 Kim, H. K.
Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation 2019 Kocher, M.
Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET 2019 Severino, A.
Electrical Characterization of MOCVD Grown Single Crystalline AIN Thin Films on 4H-SiC 2019 Khosa, R. Y.
Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC 2019 Muraoka, K.
Alle Artikel auflisten