| Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
|
2019 |
Hsiao, J. Steiner, M. Arzig, T. C. |
| Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
|
2019 |
Lee, J. W. Choi, J. G. Kim, B. K. Jang, S. K. Ko, M. O. Kyun, J. D. Seo, K. R. Ku, C. Y. |
| A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
|
2019 |
Bathey, P. S. Raghavan. R. Drachev. B. |
| Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
|
2019 |
Seki, K. Kawaguchi, K. |
| Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition
|
2019 |
Ishii, Y. Daigo, A. Ishiguro, S. |
| Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
|
2019 |
Mochizuki, K. |
| Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique
|
2019 |
Savtchouk, A. |
| Atomic Coordination Analysis of Nitrogen Introduced in SiO2/SiC Interface and SiO2 Layer by XAFS Measurement
|
2019 |
Kunisu, M. |
| Si02/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
|
2019 |
Fiorenza, P. |
| Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
|
2019 |
Kamata, I. |
| Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
|
2019 |
Hattori, R. |
| Electrically Active Levels Generated by Long Oxidation Times in 4H-SiC
|
2019 |
Knoll, L. |
| Thermal Annealing of High Dose P Implantation in 4H-SiC
|
2019 |
Calabretta, C. |
| Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
|
2019 |
Mochizuki, K. |
| 1300°C Annealing of 1x102° AI" Ion Implanted 3C-SiC
|
2019 |
Nipoti, R. |
| Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
|
2019 |
Kim, H. K. |
| Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
|
2019 |
Kocher, M. |
| Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
|
2019 |
Severino, A. |
| Electrical Characterization of MOCVD Grown Single Crystalline AIN Thin Films on 4H-SiC
|
2019 |
Khosa, R. Y. |
| Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
|
2019 |
Muraoka, K. |
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