(Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program

(Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program

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Veröffentlicht in:Symposium "Gallium Nitride and Silicon Carbide Power Technologies" (Veranstaltung : 11. : 2021 : Online) Gallium Nitride and Silicon Carbide Power Technologies 11
1. Verfasser: Kizilyalli, I. C. (VerfasserIn)
Weitere Verfasser: Carlson, E. P. (VerfasserIn)
Pages:11
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2021
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Titel Jahr Verfasser
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(Invited) Medium-Voltage SiC Devices for Next Generation of Power Conversion 2021 Ghandi, R.
Investigation of Dislocations in 6H-SiC Axial Samples Using Synchrotron X-Ray Topography and Ray Tracing Simulation 2021 Peng, H.
(Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program 2021 Kizilyalli, I. C.
(Invited) Complex Relative Permittivity of UV-C Transparent AIN 2021 Dalmau, R.
Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications 2021 Bondokov, R. T.
Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation 2021 Chen, Z.
Failure investigation of a Ag sinter-joining SiC power device under harsh cycling conditions 2021 Zhang, Z.
Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography 2021 Liu, Y.
(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC 2021 Khachatrian, A.
Prismatic Slip in AIN Crystals Grown By PVT 2021 Hu, S.
(Invited) Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC 2021 Das, H.
(Invited) Selective Area Etching and Doping of GaN for High-Power Applications 2021 Li, B.
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