ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY AND IMPROVED Sb DOPING CHARACTERISTICS IN MOLECULAR BEAM EPITAXIAL SILICON FILMS

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Bibliographische Detailangaben
Veröffentlicht in:	Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (28. : 1985 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 28kai Shinpojiumu
1. Verfasser:	Aizaki, N. (VerfasserIn)
Weitere Verfasser:	Tatusmi, T. (VerfasserIn)
Pages:	28
Format:	UnknownFormat
Sprache:	jpn
Veröffentlicht:	1985
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Titel	Jahr	Verfasser
DEGRADATION IN QUALITY OF THIN SILICON DIOXIDE BY ION IMPLANTATION	1985	Sugiura, S.
ELECTRIC CHARACTERISTICS OF SILICON NITRIDE/ SILICON DIOXIDE STACKED MIS STRUCTURE	1985	Miki, K.
INVESTIGATION OF REACTIVELY SPUTTERED TiN FILMS FOR DIFFUSION BARRIERS	1985	Kanamori, S.
ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY AND IMPROVED Sb DOPING CHARACTERISTICS IN MOLECULAR BEAM EPITAXIAL SILICON FILMS	1985	Aizaki, N.
CLEAN ROOM TECHNOLOGY	1985	Hayakawa, I.
MOCVD GROWTH OF InP AND ITS ALLOY SEMICONDUCTORS	1985	Morisaki, M.
A NEW ISOPLANAR LOCOS TECHNOLOGY USING A THIN OXIDE BUFFER LAYER	1985	Kayama, S.
DEGRADATION OF n-MOS TRANSISTOR BY HOT CARRIER INJECTION	1985	Mitsuhashi, J.
GROWTH OF LOW DISLOCATION GaAs CRYSTALS BY VERTICAL HEATING METHOD	1985	Washizuka, S.
SEMICONDUCTOR FABRICATION EQUIPMENT TECHNOLOGY PRESENT AND FUTURE	1985	Maeda, K.
REACTIVE ION ETCHING OF Ta BY USING CHLORINE BASED PLASMAS	1985	Yamada, M.
POPERTIES OF SELECTIVE CVD TUNGSTEN FILM	1985	Ohyama, Y.
1.1K GATE SOCMOS GATE ARRAY FABRICATED BY LASER RECRYSTALLIZATION TECHNIQUE	1985	Kusunoki, S.
SILICON EPITAXIAL GROWTH USING DISILANE SOURCE GAS	1985	Yamazaki, T.
SIMOX TECHNOLOGY	1985	Izumi, K.
SEMICONDUCTOR INDUSTRY TODAY	1985	Shimura, Y.
ORIENTAION EFFECTS ON PLANER P-N JUNCTION FIELD-EFFECT TRANSISTORS ON (100) GaAs	1985	Wada, M.
PULSED EXCIMER LASER ANNEALING OF HYDROGENATED AMORPHOUS SILICON	1985	Sameshima, T.
AMORPHOUS SILICON PHOTOCONDUCTOR OVERLAID CCD IMAGE SENSOR	1985	Washida, H.
SI NODULE FORMATION IN Al-Si AND RELIABILITY	1985	Tatsuzawa, T.