High Performance SiOxHy : H Anti-reflective-layer for Sub-0.3 4m Device Pattern Fabrication

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Veröffentlicht in:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (45. : 1993 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 45kai Shinpojiumu
1. Verfasser: Nakano, H. (VerfasserIn)
Weitere Verfasser: Gocho, T. (VerfasserIn), Yabuta, M. (VerfasserIn), Ogawa, T. (VerfasserIn), Tsumori, T. (VerfasserIn)
Pages:45
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1993
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Quantitative Evaluation on Tunneling Current Through Ultra-Thin Gate Oxide 1993 Hirose, M.
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Phase Defect Repair Method for Conjugate Twin-Shifter Method 1993 Kuwahara, K.
Dissolution Rate Modeling and Process Margin Analysis of Chemically Amplified Positive Resists 1993 Ohfuji, T.
Computational Approach to the Antireflective Method 1993 Kasuga, T.
Hydrogen-Radical-Balanced Steam Oxidation Technology for Ultra-Thin Oxide with High Reliability 1993 Nakamura, K.
Thin SiO: Film Oxidized in Ozone Atmosphere 1993 Nakanishi, T.
Gate Oxide Film Formation at a Temperature of 450° C 1993 Kawai, Y.
Ultra-high Resolution Techniques in Optical Lithography 1993 Harada, K.
Acid Diffusion in a Chemically Amplified Resist 1993 Nakamura, J.
Silicon Surface Damage Caused by Fluorocarbon Gas Plasma 1993 Ikeda, N.
Thermal Behavior of Three Type of Precipitates in as-grown CZ Silicon Crystals 1993 Kashima, K.
Sub-atomic-layer Epitaxy of Si 1993 Ishida, M.
Voltage-Current Characteristics of Ultra Thin Thermal Oxide Films 1993 Okada, K.
High Performance SiOxHy : H Anti-reflective-layer for Sub-0.3 4m Device Pattern Fabrication 1993 Nakano, H.
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