Submicron Thinning of finFET Devices with High Power Density Observed in 10/7nm Process Nodes using High Aspect Ratio Trenches

Submicron Thinning of finFET Devices with High Power Density Observed in 10/7nm Process Nodes using High Aspect Ratio Trenches

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Veröffentlicht in:International Symposium for Testing and Failure Analysis (45. : 2019 : Portland, Or.) ISTFA 2019
1. Verfasser: Bakken, Nathan (VerfasserIn)
Weitere Verfasser: Vlasyuk, Vladimir (VerfasserIn), Beal, Michael (VerfasserIn), Artishuk, Ilya (VerfasserIn), Chivas, Robert (VerfasserIn), DiBattista, Mike (VerfasserIn), Silverman, Scott (VerfasserIn)
Pages:2019
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2019
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