| Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
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2020 |
Tokuda, Y. |
| Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer
|
2020 |
Jang, B. K. |
| Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process
|
2020 |
Park, J. H. |
| Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
|
2020 |
Ferro, G. |
| Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCI Gas with High CI/Si Ratio in CVD Process
|
2020 |
Daigo, Y. |
| Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
|
2020 |
Wellmann, P. J. |
| Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
|
2020 |
Zielinski, M. |
| Mono-Versus Poly-Crystalline SiC for Nuclear Applications
|
2020 |
Huang, X. |
| Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
|
2020 |
Zeghbroeck, B. Van |
| Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
|
2020 |
Matsuura, H. |
| Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation
|
2020 |
Sugiura, T. |
| Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC
|
2020 |
Zubov, L. V. Shakhov, A. A. Lebedev, N. V. Seredova, S. P. Lebedev, V. V. Kozlovski, A. V. |
| SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative Analysis
|
2020 |
Sankin, V. I. |
| Resistivity Measurement of P*-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry
|
2020 |
Ishiji, K. |
| Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes
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2020 |
Yamazaki, Y. |
| 4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System
|
2020 |
Hasegawa, M. |
| Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Densitv Substrate or an Epitaxial Wafer with an HNDE
|
2020 |
Nishihara, Y. |
| AFM Observation of Etch-Pit Shapes on ß-Ga2 O3 (001) Surface Formed by Molten Alkali Etching
|
2020 |
Ogawa, K. |
| Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
|
2020 |
Lim, M. W. |
| 4H-SiC Power VDMOSFET Manufacturing Utilizing POCI3 Post Oxidation Annealing
|
2020 |
Ju, Y. |
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