Silicon carbide and related materials 2019 : ICSCRM 2019 : selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

Silicon carbide and related materials 2019 ICSCRM 2019 : selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

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Bibliographische Detailangaben
Körperschaft: International Conference on Silicon Carbide and Related Materials (VerfasserIn)
Weitere Verfasser: Yano, Hiroshi (HerausgeberIn), Ohshima, Takeshi (HerausgeberIn), Eto, Kazuma (HerausgeberIn), Harada, Shinsuke (HerausgeberIn), Mitani, Takeshi (HerausgeberIn), Tanaka, Yasunori (HerausgeberIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: Baech Trans Tech Publications Ltd 2020
Schriftenreihe:Materials science forum Volume 1004
Schlagworte:
Konferenzschrift
Online Zugang:Inhaltsverzeichnis
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Titel Jahr Verfasser
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method 2020 Tokuda, Y.
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6"-SiC Wafer 2020 Jang, B. K.
Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process 2020 Park, J. H.
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al 2020 Ferro, G.
Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCI Gas with High CI/Si Ratio in CVD Process 2020 Daigo, Y.
Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth 2020 Wellmann, P. J.
Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon 2020 Zielinski, M.
Mono-Versus Poly-Crystalline SiC for Nuclear Applications 2020 Huang, X.
Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC 2020 Zeghbroeck, B. Van
Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region 2020 Matsuura, H.
Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation 2020 Sugiura, T.
Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC 2020 Zubov, L. V. Shakhov, A. A. Lebedev, N. V. Seredova, S. P. Lebedev, V. V. Kozlovski, A. V.
SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative Analysis 2020 Sankin, V. I.
Resistivity Measurement of P*-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry 2020 Ishiji, K.
Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes 2020 Yamazaki, Y.
4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System 2020 Hasegawa, M.
Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Densitv Substrate or an Epitaxial Wafer with an HNDE 2020 Nishihara, Y.
AFM Observation of Etch-Pit Shapes on ß-Ga2 O3 (001) Surface Formed by Molten Alkali Etching 2020 Ogawa, K.
Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC 2020 Lim, M. W.
4H-SiC Power VDMOSFET Manufacturing Utilizing POCI3 Post Oxidation Annealing 2020 Ju, Y.
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