Computing Threshold Voltage Shift in Submicron MOSFET in Presence of Body Effect and Induced Lateral Field

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Veröffentlicht in:NCCS-2019 (5. : 2019 : Ranchi) Nanoelectronics, circuits and communication systems
1. Verfasser: Khanam, Farnaz (VerfasserIn)
Weitere Verfasser: Nath, Anwita (VerfasserIn), Deyasi, Arpan (VerfasserIn)
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Sprache:eng
Veröffentlicht: 2021
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