High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

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Veröffentlicht in:International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019
1. Verfasser: Tang, Y. D. (VerfasserIn)
Weitere Verfasser: Liu, X. Y. (VerfasserIn), Li, C. Z. (VerfasserIn), Bai, Y. (VerfasserIn), Chen, H. (VerfasserIn), Yang, C. Y. (VerfasserIn)
Pages:2019
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2020
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