Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International Conference on Silicon Carbide and Related Materials (18. : 2019 : Kyōto) Silicon carbide and related materials 2019
1. Verfasser: Tominaga, T. (VerfasserIn)
Weitere Verfasser: Hino, S. (VerfasserIn), Mitsui, Y. (VerfasserIn), Nakashima, J. (VerfasserIn), Kawahara, K. (VerfasserIn), Tomohisa, S. (VerfasserIn), Miura, N. (VerfasserIn)
Pages:2019
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2020
Schlagworte:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Titel Jahr Verfasser
Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC 2020 Eun, T. H.
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis 2020 Piluso, N.
Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool 2020 Daigo, Y.
Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool 2020 Daigo, Y.
3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress 2020 Via, F. La
Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology 2020 Rusch, O.
Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen 2020 Irikura, K.
A New Permanganate-Free Slurry for GaN-SiC CMP Applications 2020 Fang, T.
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC 2020 Hidaka, A.
Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCYV) 2020 Savtchouk, A.
Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations 2020 Tanaka, D.
Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique 2020 Kim, J. G.
Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy 2020 Ohira, K.
A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance 2020 Waskiewicz, R. J.
Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC 2020 Alfieri, G.
Near Infrared Photoluminescence of NcVsi Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles 2020 Sato, S. I.
Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer 2020 Yang, L.
Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching 2020 Anzalone, R.
TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth 2020 Takahashi, J.
Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence 2020 Nakanishi, Y.
Alle Artikel auflisten