Effect of Inductively Coupled Electromagnetic Field on Bottom Oxide Etch in a High Aspect Ratio Trench

Effect of Inductively Coupled Electromagnetic Field on Bottom Oxide Etch in a High Aspect Ratio Trench

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Veröffentlicht in:ECS Meeting (239. : 2021 : Online) (11.) Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11
1. Verfasser: Sardo, S. (VerfasserIn)
Weitere Verfasser: Palombizio, A. (VerfasserIn), Mannarino, M. (VerfasserIn), Redolfi, A. (VerfasserIn), Haspeslagh, L. (VerfasserIn)
Pages:11
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2021
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