| Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules
|
2019 |
Gesell, M. Swoboda, R. Rieske, C. Beyer, A. Ullrich, G. |
| Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
|
2019 |
Iwaya, D. Tanaka, H. Kurokawa, S. Kamiyama, T. Takeuchi, M. |
| Research on the Key Problems in the Industrialization of SiC Substrate Materials
|
2019 |
Liu, SA P. Gao, J. Xin, C. F. Yan, H. K. Kong, J. J. Chen, X. C. |
| High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
|
2019 |
Coffa, N. Piluso, A. Campione, S. Lorenti, A. Severino, G. Arena, S. |
| Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiC Wafer Fabricated by the Solution Growth Method
|
2019 |
Harada, K. Seki, K. Kusunoki, S. |
| Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
|
2019 |
Doi, K. Wada, T. Miyase, H. Itoh, T. Hori, H. |
| Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
|
2019 |
Rana, T. |
| A Study of CVD Growth Parameters to Fill 50-pm-Deep 4H-SiC Trenches
|
2019 |
Yoshida, S. Y. Ji, R. Kosugi, K. Kojima, K. Adachi, Y. Kawada, K. Mochizuki, A. Nagata, Y. Matsukawa, Y. Yonezawa, S. |
| Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
|
2019 |
Schuh, P. |
| Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs
|
2019 |
Rescher, J. Berens, G. Pobegen, T. Aichinger, G. |
| Surface Morphology of 4H-SiC after Thermal Oxidation
|
2019 |
Woerle, J. |
| Evidence for an Abrupt Transition between SiOz and SiC from EELS and Ab Initio Modelling
|
2019 |
Cottom, J. |
| Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
|
2019 |
Nishihara, Y. |
| Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
|
2019 |
Okada, A. |
| Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
|
2019 |
Das, H. |
| Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
|
2019 |
Goryu, A. |
| Effects of Aluminum Incorporation on the Young's Modulus of 3C-SiC Epilayers
|
2019 |
Messaoud, J. B. |
| 4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
|
2019 |
Kayambaki, M. |
| Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
|
2019 |
Matsuura, H. |
| Newly Resolved Phonon-Assisted Transitions and Fine Structure in the Low Temperature Wavelength Modulated Absorption and Photoluminescence Spectra of 6H SiC
|
2019 |
Klahold, W. M. |
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