| Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
|
2019 |
Uhlmann, M. Arzig, M. Salamon, N. |
| Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
|
2019 |
Choi, J. W. Choi, J. G. Kim, B. K. Jang, S. K. Ko, M. O. Kyun, J. D. Seo, K. R. Ku, J. M. |
| New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
|
2019 |
Chen, J. M. Choi, C. Y. Lee, D. S. Kim, M. S. Park, Y. S. Jang, W. J. Lee, W. Fan, H. Qu, AF X. F. |
| Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
|
2019 |
Kato, N. Komatsu, T. Mitani, Y. Hayashi, H. Suo, T. |
| Study on Dislocation Behaviors during PVT Growth of 4H-SiC
|
2019 |
Seo, I. G. Yeo, T. H. Eun, J. Y. Kim, S. S. Lee, H. S. |
| Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
|
2019 |
Kishida, K. Kusunoki, Y. |
| Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
|
2019 |
Suzuki, Y. Daigo, A. Ishiguro, S. Ishii, Y. Moriyama, K. |
| Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
|
2019 |
Kallinger, B. |
| Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
|
2019 |
Hóchbauer, C. Heidorn. R. Esteve. T. |
| New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
|
2019 |
Heidorn, T. Hôchbauer, C. |
| Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
|
2019 |
Zielinski, M. |
| Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n*-Channel Junctionless MOSFET
|
2019 |
Shimura, H. Takeda, T. Hosoi, T. |
| Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs
|
2019 |
Asllani, B. |
| First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2
|
2019 |
Cottom, M. V. Mistrv J. |
| Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed Si02/4H-SiC(0001) Structures
|
2019 |
Moges, K. |
| Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
|
2019 |
Jayawardhena, I. |
| Observation of Dislocation Conversion in 4H-SIC Epitaxial Wafer by Mirror Projection Electron Microscopy
|
2019 |
Miyaki, T. Isshiki, T. Sato, M. Hasegawa, K. Ohira, K. Kobayashi, A. |
| Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
|
2019 |
Kano, A. |
| Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
|
2019 |
Raghothamachar, B. |
| Deep Electronic Levels in n-Type and p-Type 3C-SiC
|
2019 |
Scholer, M. |
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