III-nitride ultraviolet emitters technology and applications

Preface; Contents; Contributors; 1 A Brief Review of III-Nitride UV Emitter Technologies and Their Applications; Abstract; 1.1 Background; 1.2 UV Light Emitters and Their Applications; 1.3 UV-LEDs---State of the Art and the Challenges Ahead; 1.4 UV-LEDs---Key Parameters and Device Performance; 1.5 T...

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Weitere Verfasser: Kneissl, Michael (HerausgeberIn), Rass, Jens (HerausgeberIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: Cham, Heidelberg, New York, Dordrecht, London Springer 2016
Schriftenreihe:Springer series in materials science volume 227
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Zusammenfassung:Preface; Contents; Contributors; 1 A Brief Review of III-Nitride UV Emitter Technologies and Their Applications; Abstract; 1.1 Background; 1.2 UV Light Emitters and Their Applications; 1.3 UV-LEDs---State of the Art and the Challenges Ahead; 1.4 UV-LEDs---Key Parameters and Device Performance; 1.5 The Role of Defects on the IQE of UV-LEDs; 1.6 Current-Injection Efficiency and Operating Voltages of UV-LEDs; 1.7 Light Extraction from UV-LEDs; 1.8 Thermal Management and Degradation of UV-LED; 1.9 Outlook; 1.10 Summary; Acknowledgment; References; 2 Growth and Properties of Bulk AlN Substrates
Abstract2.1 Properties and History of AlN Crystals; 2.2 AlN Bulk Growth by the PVT Method: Theory; 2.3 AlN Bulk Growth by the PVT Method: Technology; 2.4 Seeded Growth and Crystal Enlargement; 2.5 Structural Defects in PVT-Grown AlN Bulk Crystals; 2.6 Impurities and Resulting Properties of AlN Substrates; 2.7 Conclusions and Outlook; Acknowledgments; References; 3 Vapor Phase Epitaxy of AlGaN Base Layers on Sapphire Substrates for Nitride-Based UV-Light Emitters; Abstract; 3.1 Introduction; 3.2 Growth of Al(Ga)N Buffer Layers by MOVPE
3.3 Techniques for MOVPE of Al(Ga)N Base Layers with Reduced TDD3.4 Growth of AlGaN Layers by HVPE; 3.4.1 Fundamentals of the HVPE Technique; 3.4.2 The Choice of Substrate; 3.4.3 Selected Results from Growth of AlGaN Layers by HVPE; 3.4.3.1 Lateral Homogeneity; 3.4.3.2 Use of MOVPE-Grown AlN/Sapphire Templates; 3.4.3.3 Direct Growth Start in HVPE; 3.4.3.4 Growth on PSS with Trenches Along \left[ {11\bar{2}0} \right]_{\rm{sapphire}}; 3.4.3.5 Growth on PSS with Isotropic Motifs; 3.5 Summary; Acknowledgements; References
4 Growth Techniques of AlN/AlGaN and Development of High-Efficiency Deep-Ultraviolet Light-Emitting DiodesAbstract; 4.1 Introduction; 4.2 Research Background of DUV LEDs; 4.3 Growth Techniques of High-Quality AlN on Sapphire Substrate; 4.4 Marked Increase in Internal Quantum Efficiency (IQE); 4.5 222--351 nm AlGaN and InAlGaN DUV LEDs; 4.6 Increase in Electron Injection Efficiency (EIE) by MQB; 4.7 Future LED Design for Obtaining High Light Extraction Efficiency (LEE); 4.8 Summary; References
5 Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting MaterialsAbstract; 5.1 Introduction; 5.2 Experimental Details; 5.3 Impacts of Impurities and Point Defects on the Near-Band-Edge Luminescence Dynamics of AlN; 5.4 Effective Radiative Lifetime of the Near-Band-Edge Emission in AlxGa12212xN Films; 5.5 Impacts of Si-Doping and Resultant Cation Vacancy Formation on the Luminescence Dynamics of the Near-Band-Edge Emission in Al0.6Ga0.4N Films Grown on AlN Templates; 5.6 Summary; Acknowledgments; References
6 Optical Polarization and Light Extraction from UV LEDs
This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors
Beschreibung:Includes bibliographical references and index
Beschreibung:xix, 442 Seiten
Illustrationen, Diagramme
24 cm
ISBN:9783319240985
978-3-319-24098-5
9783319371276
978-3-319-37127-6