Electrical characterization of Metal - Amorphous Semiconductor - Semiconductor diodes - a general conduction model
Göttingen, Univ., Diss., 2013
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| Sprache: | eng |
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2012
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Tag hinzufügen | Zusammenfassung: | Göttingen, Univ., Diss., 2013 Metal - Amorphous Semiconductor - Semiconductor heterostructures consist of various single-crystalline semiconducting substrates such as silicon (Si), silicon carbide in 6H configuration (6H-SiC) and zinc oxide (ZnO) covered with a thin-film of an amorphous or highly disordered material such as tetrahedral amorphous carbon (ta-C) and so called turbostratic boron nitride (t-BN) as well as an evaporated metal contact on top. All of these heterostructures form heterojunction diodes and exhibit pronounced rectifying behavior, low saturation and low parasitic currents as well as high photosensit... |
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| Beschreibung: | 245 S. |