Effective electron mass in low-dimensional semiconductors

Effective electron mass in low-dimensional semiconductors

"This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semico...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Bhattacharya, Sitangshu (VerfasserIn)
Weitere Verfasser: Ghatak, Kamakhya Prasad (VerfasserIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: Berlin, Heidelberg u.a. Springer 2013
Schriftenreihe:Springer series in materials science 167
Schlagworte:
Effective mass (Physics) > Low-dimensional semiconductors > Atomic mass > Effektive Masse > Elektron > Niederdimensionaler Halbleiter
Online Zugang:Inhaltsverzeichnis
Inhaltstext
Cover
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:"This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. "--P. [4] of cover
Beschreibung:XXIII, 535 S.
Ill.
235 mm x 155 mm
ISBN:3642312470
3-642-31247-0
9783642312472
978-3-642-31247-2