Stress-induced phenomena in metallization : Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5 - 7 November 2008

Stress-induced phenomena in metallization Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5 - 7 November 2008

Electromigration in copper interconnects -- Low-K dielectrics and barrier layers -- Microstructure and stress behavior of Cu structures -- Chip package interaction, nanostructures and 3D interconnects.

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Bibliographische Detailangaben
Weitere Verfasser: Ho, Paul S. (BerichterstatterIn), Ogawa, Shinichi (BerichterstatterIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: Melville, NY American Inst. of Physics 2009
Schriftenreihe:AIP conference proceedings 1143
Schlagworte:
Interconnects (Integrated circuit technology) > Defects > Metal-metal bonds > Strength of materials > Nanostructured materials > Semiconductors > Copper > Electric properties > Konferenzschrift > Metallisieren > Elektromigration > Beanspruchung
Online Zugang:Verlagsangaben
Abstracts
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Beschreibung
Zusammenfassung:Electromigration in copper interconnects -- Low-K dielectrics and barrier layers -- Microstructure and stress behavior of Cu structures -- Chip package interaction, nanostructures and 3D interconnects.
Beschreibung:Sponsoring organization: The University of Texas at Austin
Beschreibung:VII, 233 S
Ill., graph. Darst
ISBN:9780735406803
978-0-7354-0680-3