On the modelling of semi-insulating GaAs including surface tension and bulk stresses
Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and...
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| Format: | UnknownFormat |
| Sprache: | eng |
| Veröffentlicht: |
Berlin
WIAS
2004
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| Schriftenreihe: | Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik
995 |
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Tag hinzufügen | Zusammenfassung: | Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant--Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant--Kirchhoff law by the simpler Hooke law ... |
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| Beschreibung: | 54 S. graph. Darst. |