Advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes, and equipment proceedings of the international symposium ; [International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment ... held in May 16 - 18, 2005 in ... Quebec City, Canada as a part of the 207th meeting of the Electrochemical Society]

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Bibliographische Detailangaben
Körperschaften: Electrochemical Society Electronics Division (BerichterstatterIn), Electrochemical Society Dielectric Science and Technology Division (BerichterstatterIn), Electrochemical Society High Temperature Materials Division (BerichterstatterIn), International Symposium on Advanced Gate Stack, Source - Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment (BerichterstatterIn)
Weitere Verfasser: Gusev, Evgeni P. (BerichterstatterIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: Pennington, NJ Electrochemical Society 2005
Schriftenreihe:Proceedings volume / Electrochemical Society 2005-5
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Beschreibung:XV, 634 S
ISBN:1566774632
1-56677-463-2