Advanced gate stack, source/drain and channel engineering for Si-based CMOS: new materials, processes, and equipment proceedings of the international symposium ; [International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment ... held in May 16 - 18, 2005 in ... Quebec City, Canada as a part of the 207th meeting of the Electrochemical Society]
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Format: | UnknownFormat |
Sprache: | eng |
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Pennington, NJ
Electrochemical Society
2005
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Schriftenreihe: | Proceedings volume / Electrochemical Society
2005-5 |
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Beschreibung: | XV, 634 S |
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ISBN: | 1566774632 1-56677-463-2 |