Engineering materials: research and application optimization special topic volume with invited peer-reviewed papers only
Intro -- Engineering Materials: Research and Application Optimization -- Preface -- Table of Contents -- Chapter 1: Optoelectronics and Electronics Devices -- Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT -- Nanomanipulation of Functionalized Gold Nanoparticles on GaN -- Impact of Notch...
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| Format: | UnknownFormat |
| Sprache: | eng |
| Veröffentlicht: |
Baech
Scientific.Net
2023
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| Schriftenreihe: | Key engineering materials
volume 947 |
| Schlagworte: | |
| Online Zugang: | Inhaltsverzeichnis |
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Tag hinzufügen | Zusammenfassung: | Intro -- Engineering Materials: Research and Application Optimization -- Preface -- Table of Contents -- Chapter 1: Optoelectronics and Electronics Devices -- Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT -- Nanomanipulation of Functionalized Gold Nanoparticles on GaN -- Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study -- Comparison of the Electrical Performance of AlN and HfO2 Passivation Layer in AlGaN/GaN HEMT -- Microfiber Optics Liquid Refractometer: The Effect of Taper Waist -- Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact -- Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness -- Investigation on Absorption and Photocurrent in Silicon Absorber with Varied Pyramid Texture Angles by Ray Tracer -- Chapter 2: Research and Optimisation of Power Electronic Devices on Silicon Carbide -- Threshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate Material -- Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process -- Assessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching Operation -- Towards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters -- Optimizing PECVD a-SiC:H Films for Neural Interface Passivation -- Effect of Termination Region on Unclamped Inductive Switching Failure for 4H-SiC VDMOS -- Numerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC Diodes -- Chapter 3: Green Building Materials and Construction Technology -- The Mechanical Properties and Microstructure of Gypsum Board Manufactured from Water Hyacinth and Coconut Fiber. |
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| Beschreibung: | Literaturangaben |
| Beschreibung: | viii, 150 Seiten Illustrationen, Diagramme |
| ISBN: | 9783036403298 978-3-0364-0329-8 |