Elements of electromigration electromigration in 3D IC technology
In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures.
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| Format: | UnknownFormat |
| Sprache: | eng |
| Veröffentlicht: |
Boca Raton, London, New York
CRC Press
2024
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| Ausgabe: | First edition |
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| Online Zugang: | Inhaltsverzeichnis |
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Tag hinzufügen | Zusammenfassung: | In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures. Cover -- Half Title -- Title Page -- Copyright Page -- Table of Contents -- Chapter 1 Introduction -- 1.1 Introduction -- 1.2 Brief History of Electromigration in Microelectronic Technology -- 1.3 Electromigration in 3D IC Technology -- 1.4 Comparison between Atomic Flux and Electronic Flux -- 1.4.1 On Driving Force -- 1.4.2 On Mobility -- 1.4.3 On Flux -- Problems -- References -- Chapter 2 Driving Forces of Electromigration -- 2.1 Introduction -- 2.2 Electron Wind Force of Electromigration -- 2.2.1 Calculation of the Effective Charge Number -- 2.3 Current Density Gradient force of Electromigration -- 2.3.1 Void Formation in the Low Current Density Regions -- Problems -- References -- Chapter 3 Kinetics of Electromigration -- 3.1 Introduction -- 3.2 Blech's Short-Stripe Test Sample -- 3.3 Interaction between Stress and Electromigration -- 3.4 Atomic Flux Divergence -- 3.5 Lattice Shift in Interdiffusion -- 3.6 Rapid Failure in Electromigration -- Problems -- References -- Chapter 4 Damage of Electromigration -- 4.1 Introduction -- 4.2 Microstructure Change With or Without Lattice Shift -- 4.3 Damage in Al Interconnects -- 4.4 DAMAGE IN CU DAMASCENE INTERCONNECTS -- 4.5 Damage in Flip-Chip Solder Joints -- 4.6 Damage in Redistribution Layer Due to Joule Heating -- 4.7 Damage in Redistribution Layer Due to Oxidation and Electromigration -- 4.8 Damage in Cu-To-Cu Direct Bonding -- 4.9 Damage in M-Bump Solder Joints to Form Porous IMC -- 4.10 Summary -- Problems -- References -- Chapter 5 Irreversible Processes -- 5.1 Introduction -- 5.2 Flow in Open Systems -- 5.3 Rate of Entropy Production -- 5.3.1 Electrical Conduction -- 5.3.2 Atomic Diffusion -- 5.3.3 Heat Conduction -- 5.4 Rate of Gibbs free Energy Change -- 5.4.1 Crystallization of Amorphous Si -- 5.5 Cross-Effects in Irreversible Processes. |
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| Beschreibung: | Literaturangaben |
| Beschreibung: | ix, 131 Seiten Illustrationen, Diagramme |
| ISBN: | 9781032470276 978-1-032-47027-6 9781032470283 978-1-032-47028-3 9781003384281 978-1-003-38428-1 |