A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Joint Symposium: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) and GaN and SiC Power Technologies (2020 : Online) Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) and GaN and SiC Power Technologies 10
1. Verfasser: Nagai, K. (VerfasserIn)
Weitere Verfasser: Akiyama, T. (VerfasserIn), Nakamura, K. (VerfasserIn), Ito, T. (VerfasserIn)
Pages:63
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2020
Schlagworte:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Titel Jahr Verfasser
Synchrotron X-ray Topography Characterization of Commercial GaN Substrates for Power Electronic Applications 2020 Liu, Y.
Selective-Area Growth of AlInAs Nanowires 2020 Tai, Y.
(Invited) Insights into the UV-C Optical Absorption of AIN Substrates Grown by PVT 2020 Dalmau, R.
III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection 2020 Bui, H. Q. T.
The Structural Evolution of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions 2020 Liao, M. E.
Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers 2020 Cho, M.
(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication 2020 Das, H.
(Invited) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests 2020 Zhang, R.
(Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices 2020 Hite, J. K.
Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor Phase Epitaxy 2020 Peng, H.
(Invited) A Path Toward Vertical GaN Superjunction Devices 2020 Khachariya, D.
(Invited) Heterogeneous Integration of Silicon CMOS Electronics and Compound Semiconductor Electronics for Miniature RF Photonic Transceivers 2020 Nordquist, C. D.
Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography 2020 Ailihumaer, T.
Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation 2020 Cheng, Q.
A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate 2020 Nagai, K.
Alle Artikel auflisten