Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation

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Veröffentlicht in:Joint Symposium: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) and GaN and SiC Power Technologies (2020 : Online) Joint Symposium: State-of-the-Art Program on Compound Semiconductors 63 (SOTAPOCS 63) and GaN and SiC Power Technologies 10
1. Verfasser: Cheng, Q. (VerfasserIn)
Weitere Verfasser: Ailihumaer, T. (VerfasserIn), Peng, H. (VerfasserIn), Liu, Y. (VerfasserIn), Raghothamachar, B. (VerfasserIn), Dudley, M. (VerfasserIn)
Pages:63
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Sprache:eng
Veröffentlicht: 2020
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