PATTERN DATA PROCESSING TECHNOLOGY FOR ELECTRON BEAM DIRECT WRITING

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Veröffentlicht in:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (23. : 1982 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 23kai Shinpojiumu
1. Verfasser: Komatsu, K. (VerfasserIn)
Weitere Verfasser: Moriya, S. (VerfasserIn)
Pages:23
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1982
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Titel Jahr Verfasser
EFFECT OF AMBIENT GAS ON UNDOPED LEC GiAs SINGLE CRYSTAL 1982 Emori, H.
ULTRA STEEP GROOVES FORMED BY PERIPHERAL ETCHING AND APPLICATION TO DEVICE ISOLATION 1982 Fukano, T.
AUTOMATED WAFER CLEANING IN LSI FABRICATION PROCESS 1982 Fujinaga, K.
RIE AND ITS APPLICATION TO VLSI PROCESSING 1982 Wang, D. N. K.
PATTERN DATA PROCESSING TECHNOLOGY FOR ELECTRON BEAM DIRECT WRITING 1982 Komatsu, K.
A 1.1um CMOS PROCESSING BY C-SEPOX ISOLATION 1982 Matsukawa, N.
AN AUTOMATIC SHAPE CONTROL OF IIIl-V COMPOUND CRYSTALS - IN THE CASE OF InSb CRYSTAL - 1982 Washizuka, S.
RESIST MATERIALS FOR BI-LEVEL RESIST SYSTEMS 1982 Suzuki, M.
NEGATIVE ACTING DEEP U.V. RESIST CONTAING 2,4-DICHLOROBENZOATE MOIETY AS PHOTOSENSITIZER 1982 Ochi, H.
FORMATION OF Mo AND Mo-SILICIDE FILM BY PLASMA ASSISTED CHEMICAL VAPER DEPOSITION 1982 Tabuchi, A.
EVALUATION OF RELIABILITY ON SOLDERED JOINTS OF FLAT PACKED LSI 1982 Soga, T.
HIGH-RESOLUTION NEGATIVE PHOTORESIST (CYCLIZED POLYISOPRENE) WITH VERY NARROW MOLECULAR WEIGHT DISTRIBUTIONS 1982 Itaya, K.
BURIED POLYSILICON ISOLATION WITH POLISILICON SELF ALIGNE ETCHING 1982 Fuse, G.
SOME PROPERTIES OF SPUTTERED ALUMINUM AND SILICON DIOXIDE FILMS 1982 Takao, S.
ELECTRON BEAM DIRECT EXPOSURE TECHNOLOGY (3) FABRICATION OF SUBMICRON MOS DEVICES 1982 Mitsuhashi, J.
COMPUTER CONTROL SYSTEM FOR IC PRODUCTION PROCESS 1982 Yoshida, Y.
SUBMICRON LITHOGRAPHY USING ELECTRON-BEAM DIRECT WRITING TECHNOLOGY 1982 Matsuda, T.
AUTOMATED ELECTRICAL EVALUATION OF SUB-MICRON LINE WIDTH 1982 Hasegawa, S.
A 2um PROCESS DESIGN FOR VERY LOW POWER DISSIPATION CMOS VLSI'S 1982 Matsunaga, J.
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