A methodology for characterization, modeling and mitigation of single event transient effects in CMOS standard combinational cells

Dissertation, Universität Potsdam, 2021

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Andjelković, Marko (VerfasserIn)
Körperschaft:	Universität Potsdam (Grad-verleihende Institution)
Weitere Verfasser:	Krstić, Miloš (AkademischeR BetreuerIn), Michalik, Harald (AkademischeR BetreuerIn), Gössel, Michael (AkademischeR BetreuerIn), Schölzel, Mario (AkademischeR BetreuerIn), Lucke, Ulrike (AkademischeR BetreuerIn)
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	Potsdam 2021
Schlagworte:	Hochschulschrift > Integrierte Schaltung > Single Event Effect > Strahlenhärten
Online Zugang:	Inhaltsverzeichnis
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Dissertation, Universität Potsdam, 2021 With the downscaling of CMOS technologies, the radiation-induced Single Event Transient (SET) effects in combinational logic have become a critical reliability issue for modern integrated circuits (ICs) intended for operation under harsh radiation conditions. The SET pulses generated in combinational logic may propagate through the circuit and eventually result in soft errors. It has thus become an imperative to address the SET effects in the early phases of the radiation-hard IC design. In general, the soft error mitigation solutions should accommodate both static and dynamic measures to ensure the optimal utilization of available resources. An efficient soft-error-aware design should address synergistically three main aspects: (i) characterization and modeling of soft errors, (ii) multi-level soft error mitigation, and (iii) online soft error monitoring. Although significant results have been achieved, the effectiveness of SET characterization methods, accuracy of predictive SET models, and efficiency of SET mitigation measures are ...
Beschreibung:	xxiv, 216 Seiten Illustrationen, Diagramme