Stress Induced Leakage Current and Dielectric Breakdown in Ultra Thin Gate Oxides

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (51 : 1996 : Tokio) 51. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū
1. Verfasser: Okada, K. (VerfasserIn)
Weitere Verfasser: Kawasaki, S. (VerfasserIn)
Pages:51
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 1996
Schlagworte:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Titel Jahr Verfasser
Stack Type Capacitor Technology for Giga-bit DRAM's 1996 Ohji, Y.
Alchole Addition Enhanced Growth of CVD-Ta2O5 Film in Single-wafer Type Reactor 1996 Sugiura, M.
Dielectric Thin Film Materials 1996 Ogi, K.
Adsorption Behavior of Organic Contaminants on the Silicon Wafer 1996 Sugimoto, F.
Failure Analysis Expert System for ULSI Yield Improvement 1996 Mukogawa, Y.
A Low-Temperature Deposition of RF-sputtered (Ba, Sr) TiO3 Thin Films for ULSI DRAM Applications 1996 Takehiro, S.
Recent Trend in Yield Management System 1996 Tsujide, T.
Molecular Dynamics Simulation of Surface Melting for Al Reflow 1996 Tsukamoto, S.
Improvement of Insulating Properties in Ta2O5 Films by Low Temperature O3 Annealing 1996 Moon, B. K.
BST Films for Gbit Scale DRAM’s 1996 Mikami, N.
Microstructures of Ba0,5 Sr0,6 TiO3/SrRuO3 Capacitors 1996 Izuha, M.
Structural Evaluation of Ultrathin SiO2 Interfacial Layer — Evaluation by X-ray Interference Techniques 1996 Awaji, N.
Minority Carrier Lifetime Measurement of Si Wafers Lapped by the Mechanical Grinding 1996 Kinoshita, K.
Preparation of (Ba, Sr) TiO2 Thin Films on 8-inch Wafers Using Solution Source CVD Method 1996 Sawado, Y.
ECR Plasma CVD-(Ba, Sr)TiO3 Capacitor Films for Giga-Bit DRAMs 1996 Yoshida, M.
Field-Accelerated Lifetime Prediction Model for TDDB in Thin Gate Oxide Films 1996 Kimura, M.
Stress Induced Leakage Current and Dielectric Breakdown in Ultra Thin Gate Oxides 1996 Okada, K.
Capacitor Electrode for Gbit-class DRAM 1996 Kimura, T.
Post-Gate Oxidation Treatments that Improve the Reliability of Thin Rapid Thermal Processed Oxides 1996 Ono, Y.
Highly Reliable Gate Oxides Formed by UV-O2 Oxidation 1996 Teramoto, A.
Alle Artikel auflisten