New Concept Materials for ArF Lithography Resists

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Veröffentlicht in:Handōtai-Shūseki-Kairo-Gijutsu-Shinpojiumu (50 : 1996 : Tokio) 50. Handōtai Shuseki Kairo Gijutsu Shinpojiumu Kōen Ronbunshū
1. Verfasser: Saitoh, M. (VerfasserIn)
Pages:50
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1996
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Titel Jahr Verfasser
Cooperative Efforts Toward 300mm Technology 1996 Komiya, H.
Dependence of Line Width on Pattern-Pitch in Chemically Amplified Resist 1996 Usujima, A.
Wafer Characteristics and Crystal Quality for 300mm Wafer 1996 Yamamoto, H.
Effect of Gettering on Device Characteristics 1996 Kitano, T.
Tungsten Etchback in a MORI High Density Plasma Etcher 1996 Ha, J. H.
Simulation Study on Control Mechanism of Profile and Dimension ın Poly-Silicon Gate Etching 1996 Ohkuni, K. Harafuji. M.
RIE Process Limit Consideration Through Profile Simulation 1996 Park, J. S.
The Semiconductor Roadmap: A Guide for Industry Cooperation 1996 Owens, Jim
Current Status and Subjects of Half-Tone Phase Shift Mask for KrF Lithography 1996 Mohri, H.
SiO2 Selective Etch Mechanism in High-Aspect-Ratio Holes 1996 Sekine, M.
Automatic Optical Proximity Correction Using Aerial Image Simulation and Newton Optimization Scheme 1996 Park, C. H.
Development of KrF Excimer Laser 1996 Mizoguchi, H.
Silicon Crystal Technology in the Sub-Quarter Micron Era 1996 Tsuya, H.
Current Issues and Future Challenges in High Density Plasma Etching 1996 Samukawa, S.
Improvement of Dry Etching Selectivity of Aluminum Alloy to Photoresist by Means of Ion Implantation 1996 Shibata, K.
Deposition Model of SiO2 CVD Using Tetra-Isocyanate-Silane and Water 1996 Fujimoto, A.
Present Status and Issues of KrF Excimer Laser Lithography 1996 Hashimoto, T.
Overview of KrF Excimer Laser Chemically Amplified Resist Process 1996 Endo, M.
New Concept Materials for ArF Lithography Resists 1996 Saitoh, M.
Development of KrF Excimer Laser Stepper 1996 Hata, H.
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