Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering

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Veröffentlicht in:Photovoltaic Science and Engineering Conference in Japan (1 : 1979 : Tokio) Proceedings of the 1st Photovoltaic Science and Engineering Conference in Japan
1. Verfasser: SUZUKI, M. (VerfasserIn)
Weitere Verfasser: NAKAO, A. (VerfasserIn), MAEKAWA, T. (VerfasserIn), KUMEDA, M. (VerfasserIn), SHIMIZU, T. (VerfasserIn)
Pages:1
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 1980
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