SELF ALIGNED CONTACT BY SILICON SELECTIVE EPITAXIAL GROWTH

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Veröffentlicht in:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (31. : 1986 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 31kai Shinpojiumu
1. Verfasser: Samata, S. (VerfasserIn)
Weitere Verfasser: Shibata, H. (VerfasserIn), Matsuno, T. (VerfasserIn), Sasaki, H. (VerfasserIn), Matsushita, Y. (VerfasserIn), Ohta, T. (VerfasserIn)
Pages:31
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1986
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Titel Jahr Verfasser
THE RELATIONSHIP BETWEEM RESIST CONTRAST AND OPTICAL PROPERTIES OF CEL DYES 1986 Uchino, S.
A FAST MONTE CARLO SIMULATION FOR ELECTRON - BEAM LITHOGRAPHY BY A SUPERCOMPUTER 1986 Hidaka, T.
CHARACTERISTICS OF MOLYBDENUM SILICIDE MASK (CHARACTERISTICS OF THIN FILM) 1986 Chiba, A.
FORMATION OF SUBMICRON SILICON NITRIDE PATTERNS BY LIFT-OFF METHOD USING ECR-CVD 1986 Shikata, S.
LOW TEMPERATURE PLANALIZATION TECHNIQUE FOR MULTILAYER INTERCONNECTIONS IN GaAs LSI PROCESS 1986 Miyazaki, M.
DETECTION OF DEFECTS IN SiO2 THIN FILM BY AR — ANNEALING 1986 Kobayashi, M.
CHEMICAL STRUCTURE OF Si — SiO2 INTERFACE 1986 Hattori, T.
DEVELOPMENT AND APPLICATION OF SIMULATION SYSTEM FOR EVALUATING ZLECTRON BEAM WRITING AND DEVELOPMENT PROCESS SEED 1986 Suga, O.
ALIGNMENT ACCURACY EVALUATION FOR WAFER STEPPER 1986 Komai, M.
ECR PLASMA CVD 1986 Matsuo, S.
DENSIFICATION MECHANISM IN MICROWAVE-PLASMA — ACTIVATED DEPOSITION OF SiO2 FILM 1986 Murakamıi, E.
SELECTIVE DEPOSITION OF SiO2 FILM BY LASER INDUCED CVD 1986 Hiura, Y.
A NEW GETTERING OF Si WAFER BY EXCIMER LASER IRRADIATION 1986 Takemura, K.
FORMATION OF SHALLOW JUNCTION BY RAPID THERMAL ANNEALING 1986 Uoochi, Y.
HIGH OXYGEN -CONTENT MCZ SILICON CRYSTALS 1986 Futagami, M.
NEW HEAT RESISTANT POSITIVE WORKING PHOTORESIST — MOST 1986 Konishi, S.
LARGE FIELD WRITING CHARACTERISTICS OF EB57 1986 Moriya, S.
a — Si : H FILMS PREPARED BY ECR PLASMA ENHANCED CVD 1986 Hine, S.
ETCHING CHARACTERISTIC OF SUBMICRON TRENCH 1986 Kase, M.
GENERATION OF SURFACE STATES AND TRAPS 1986 Uchida, H.
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