The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes

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Veröffentlicht in:	Asia-Pacific Conference on Silicon Carbide and Related Materials (2019 : Peking) Materials for electronics: silicon carbide and related materials
1. Verfasser:	Niu, Y. X. (VerfasserIn)
Weitere Verfasser:	Song, D. B. (VerfasserIn), Sang, L. (VerfasserIn)
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2020
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