2D materials for nanoelectronics
Theory of the structural, electronic and transport properties of graphene / Massoud Ramezani Masir, Ortwin Leenaerts, Bart Partoens, and François Peeters -- Epitaxial graphene: progress on synthesis and device integration / Joshua Robinson, Matthew Hollander, and Suman Datta -- Metal contacts to gra...
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | UnknownFormat |
| Sprache: | eng |
| Veröffentlicht: |
Boca Raton, London, New York
CRC Press, Taylor & Francis Group
2020
|
| Ausgabe: | First issued in paperback |
| Schriftenreihe: | Series in materials science and engineering
|
| Schlagworte: | |
| Online Zugang: | Inhaltsverzeichnis |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Tag hinzufügen | Zusammenfassung: | Theory of the structural, electronic and transport properties of graphene / Massoud Ramezani Masir, Ortwin Leenaerts, Bart Partoens, and François Peeters -- Epitaxial graphene: progress on synthesis and device integration / Joshua Robinson, Matthew Hollander, and Suman Datta -- Metal contacts to graphene / Akira Toriumi and Kosuke Nagashio -- Graphene for RF analog applications / Max Lemme and Frank Schwierz -- High-field and thermal transport in graphene / Zuanyi Li, Vincent Dorgan, Andrey Serov, and Eric Pop -- Theoretical study of transition metal dichalcogenides / Emilio Scalise -- Physico-chemical characterization of MoS2/metal and MoS2/oxide interfaces / Stephen McDonnell, Rafik Addou, Christopher Hinkle, and Robert Wallace -- Transition metal dichalcogenide Schottky barrier transistors: a device analysis and material comparison / Joerg Appenzeller, Feng Zhang, Saptarshi Das, and Joachim Knoch -- TMD-based photodetectors, light emitters and photovoltaics / Thomas Mueller -- Optoelectronics, mechanical properties and strain engineering in MoS2 / Andres Castellanos-Gomez, Michele Buscema, Herre S.J. van der Zant, and Gary A. Steele -- Device physics and device mechanics for flexible TMD and phosphorene thin film transistors / Hsiao-Yu Chang, Weinan Zhu, and Deji Akinwande -- Structural, electronic and transport properties of silicene and germanene / Michel Houssa, Valery Afanas'ev, and André Stesmans -- Group IV semiconductor 2D materials: the case of silicene and germanene / Alessandro Molle, Dimitra Tsoutsou, and Athanasios Dimoulas -- Stannene: a likely 2D topological insulator / William Vandenberghe, Ana Suarez Negreira, and Massimo Fischetti -- Phosphorene: a novel 2D material for future nanoelectronics and optoelectronics / Yexin Deng, Wei Luo, Han Liu, Yuchen Du, Kun Xu, and Peide Ye -- 2D-crystal based heterostructures for nanoelectronics / Cinzia Casiraghi and Freddie Withers. "Major developments in the semiconductor industry are on the horizon through the use of 2D materials such as graphene and transition metal dichalcogenides for integrated circuits. This book provides the first comprehensive treatment of the field with an emphasis on applications in nanoelectronic devices. Chapters are divided by the three major families of such materials, covering graphene for analog and photonic applications, MoS2 (molybdenum disulfide) for logic applications and novel materials such as silicene, germanene, stanene and phosphorene"-- "Major developments in the semiconductor industry are on the horizon through the use of 2D materials such as graphene and transition metal dichalcogenides for integrated circuits. This book provides the first comprehensive treatment of the field with an emphasis on applications in nanoelectronic devices. Chapters are divided by the three major families of such materials, covering graphene for analog and photonic applications, MoS2 (molybdenum disulfide) for logic applications and novel materials such as silicene, germanene, stanene and phosphorene"-- |
|---|---|
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | xvi, 467 Seiten Illustrationen, Diagramme |
| ISBN: | 9780367783037 978-0-367-78303-7 |