High Purity and High Mobility Semiconductors 16

Gespeichert in:

Bibliographische Detailangaben
Körperschaften:	ECS Meeting (VerfasserIn), Electrochemical Society (Herausgebendes Organ), Electrochemical Society Electronics and Photonics Division (SponsorIn)
Weitere Verfasser:	Simoen, Eddy (HerausgeberIn)
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	Pennington, NJ, USA ECS, the Electrochemical Society 2021 Red Hook, NY Curran Associates, Inc.
Schriftenreihe:	ECS transactions General topics vol. 102, no. 4
Schlagworte:	Konferenzschrift
Online Zugang:	Inhaltsverzeichnis
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Titel	Jahr	Verfasser
(Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer	2021	Yamamoto, K.
(Invited) Interface Treatment Related Defects During Ge Gate Stack Formation	2021	Misra, D.
(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation	2021	Mica, I.
Formation and Characterization of Ge1-x-ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application	2021	Nakatsuka, O.
(Invited) Application of Machine Learning for High-Performance Multicrystalline Materials	2021	Usami, N.
(Gordon E. Moore Award) Impact of Micro-/Nano-Electronics, Miniaturization Limit, and Technology Development for the Next 10 Years and After	2021	Iwai, H.
(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform	2021	Chang, W. H.
(Invited) Applications of the Hakoniwa Method to Impurity Atoms Wandering Inside Si Wafers	2021	Kamiyama, E.
(Invited) Defect Engineering for Monolithic Integration of III-V Semiconductors on Silicon Substrates	2021	Claeys, C.