Predictive simulation of semiconductor processing status and challenges
Predictive simulation of semiconductor processingenables researchers and developersto extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, io...
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | UnknownFormat |
| Sprache: | eng |
| Veröffentlicht: |
Berlin, Heidelberg u.a.
Springer
2004
|
| Schriftenreihe: | Springer series in materials science
72 |
| Schlagworte: | |
| Online Zugang: | Cover Inhaltsverzeichnis Contributor biographical information Publisher description |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Tag hinzufügen 
| Zusammenfassung: | Predictive simulation of semiconductor processingenables researchers and developersto extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. TOC:Transistors and Atoms.- Atomistic Simulations of Processes at Surfaces.- Atomistic Simulations in Materials Processing.- Atomistic Simulation of Decanano MOSFETs.- Modeling and Simulation of Heterojunction Bipolar Transistors.- Gate Oxide Reliability: Physical and Computational Models.- High-K Dielectrics: The Example of Pr2O3.- Atomistic Simulation of Si3N4 CVD from Dichlorosilane and NH3.- Interconnects and Propagation of High Frequency Signals.- Modeling of Electromigration in Interconnects.- Predictive Modeling of Transition Metal Gathering: Applications and Materials Science Challenges |
|---|---|
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVII, 490 S. Ill., graph. Darst. 24 cm |
| ISBN: | 3540204814 3-540-20481-4 |