Polycrystallization of Amorphous Si Layers by Ion Implantation and Thermal Annealing

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Bibliographische Detailangaben
1. Verfasser: Takahashi, M. (VerfasserIn)
Weitere Verfasser: Kitahara, M. (VerfasserIn), Inada, T. (VerfasserIn)
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 1988
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