Capacitance-Voltage Measurements on MBE-Grown Ge-SixGe1-x-ySny Heterojunction pn-Diodes for Material Characterisation

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Pacific Rim Meeting on Electrochemical and Solid State Science (2020 : Online) (9.) SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
1. Verfasser:	Schwarz, D. (VerfasserIn)
Weitere Verfasser:	Funk, H. S. (VerfasserIn), Guguieva, K. (VerfasserIn), Oehme, M. (VerfasserIn), Schulze, J. (VerfasserIn)
Pages:	9
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2020
Schlagworte:
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Bestellen

Titel	Jahr	Verfasser
Investigation of Low Temperature Epitaxial SiGe:P in View of Source/Drain Application for 5nm Technology Node and Below	2020	Hikavwv, A. Y.
X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity	2020	Niu, G.
(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS	2020	Manger, D.
High Performance SiGe HBT Performance Variability Learning by Utilizing Neural Networks and Technology Computer Aided Design	2020	Jr., H. L. Aldridge
Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice	2020	Yamamoto, Y.
(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications	2020	Bedell, S. W.
(Invited) Engineering Strain, Defects, and Electronic Properties of (110)-Oriented	2020	Arimoto, Strained Si K.
Boron and Phosphorous Doping of GeSn for Photodetectors and Light Emitting Diodes	2020	Frauenrath, M.
(Invited) Monolithic Ge Integration on the 3 um SOI Platform for 40 GHz Photodiodes	2020	Aalto, T.
(Invited) Nickel and Nickel-Platinum Silicide for BICMOS Devices	2020	Wolansky, D.
(Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale	2020	Koelling, S.
Evaluation of Temperature and Germanium Concentration Dependence of EXAFS Oscillations in Si-Rich Silicon Germanium Thin Films	2020	Yoshioka, K.
Increased Critical Thickness for Strained SiGe on Ge-on-Si(111)	2020	Wgatsuma, Y.
Using Mextram	2020	Ding, X.
Epitaxy of Pseudomorphic GeSn Layers with Germane (GeH4) or Digermane (Ge2H6) : as Ge Precursors and Tin Tetrachloride (SnCl4) as the Sn Precursor	2020	Hartmann, J. M.
(Invited) Directly Silicon Nitride Waveguide Coupled Ge Photodiode for Non-SOI PIC and Epic Platforms	2020	Lischke, S.
Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy	2020	Quintero, A.
(Invited) Si-Cap-Free Low-Dir SiGe Gate Stack for High-Performance pFETs	2020	Arimura, H.
Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTS	2020	Chang, S. J.
SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9	2020	Liu, Q.

Alle Artikel auflisten