A Crystallization Technology for High Performance TFT and its Application to a SRAM

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Veröffentlicht in:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (41. : 1991 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 41kai Shinpojiumu
1. Verfasser: Yoshida, T. (VerfasserIn)
Weitere Verfasser: Kinugawa, M. (VerfasserIn), Kanbayashi, S. (VerfasserIn), Onga, S. (VerfasserIn), Ishihara, K. (VerfasserIn), Mikata, Y. (VerfasserIn)
Pages:41
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1991
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Crystallization Behavior of Intrinsic and Doped PECVD Amorphous Silicon Films Fonash 1991 Kakkad, R.
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Formation of the SOI Structure by Vertical Solid-Phase Epitaxial Crystallization of Amorphous Silicon with the Seed Supplied from the Top 1991 Uzawa, Y.
A Crystallization Technology for High Performance TFT and its Application to a SRAM 1991 Yoshida, T.
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