Role of AIN spacer layer and GaN back barrier on the optoelectronic properties of AIGaN/AIN/ InGaN/GaN high electron mobility transistors

Role of AIN spacer layer and GaN back barrier on the optoelectronic properties of AIGaN/AIN/ InGaN/GaN high electron mobility transistors

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Veröffentlicht in:DAE Solid State Physics Symposium (64. : 2019 : Jodhpur) DAE Solid State Physics Symposium 2019 ; C
1. Verfasser: Taya, Payal (VerfasserIn)
Weitere Verfasser: Chatterjee, Abhishek (VerfasserIn), Bose, A. (VerfasserIn), Singh, V. K. (VerfasserIn), Tyagi, Renu (VerfasserIn), Sharma, T. K. (VerfasserIn)
Pages:2019
Format: UnknownFormat
Sprache:eng
Veröffentlicht: 2020
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