HETEROEPITAXIAL GROWTH OF SrO FILMS ON Si SUBSTRATES

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Veröffentlicht in:Handōtai, Shūseki Kairo Gijutsu Shinpojiumu (30. : 1986 : Tokio) Handōtai, Shūseki Kairo Gijutsu Dai 30kai Shinpojiumu
1. Verfasser: Kado, Y. (VerfasserIn)
Weitere Verfasser: Arita, Y. (VerfasserIn)
Pages:30
Format: UnknownFormat
Sprache:jpn
Veröffentlicht: 1986
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Titel Jahr Verfasser
CHEMISTRY OF MICROLITHOGRAPHY 1986 Hasegawa, M.
NEW POSITIVE – WORKING PHOTORESIST FOR SUBMICRON LITHOGRAPHY 1986 Shoji, T.
MOS IMAGE SENSOR OVERLAID WITH AMORPHOUS SILICON 1986 Higashi, A.
PREPARATION AND PROPERTIES OF CLEAN SILICON SURFACES 1986 Kawazu, A.
X-RAY LITHOGRAPHY WITH A NEGATIVE RESIST 1986 Suzuki, Y.
TUNGSTEN MULTI–LAYER INTERCONNECTIONS FORMED BY CHEMICAL VAPOR DEPOSITION 1986 Hara, T.
INFLUENCE OF OXYGEN CONTAMINATION ON PLATINUM SILICIDE FORMATION 1986 Takahashi, Y.
CHARACTERISTICS OF MOLYBDENUM SILICIDE MASK 1986 Shigetomi, A.
A TWO–DIMENSIONAL ETCHING PROFILE SIMULATOR : ESPRIT 1986 Yamamoto, S.
HETERO – EPITAXY OF Ge BY MBE AND ITS APPLICATION TO THE OHMIC CONTACT 1986 Kimura, T.
EB DIRECT WRITING WITH THE TRILAYER RESISTS 1986 Kitakata, M.
Mo–TO–Al OHMIC CONTACT FORMATION BY DIRECT WRITING OF Mo LINES USING LASER INDUCED CVD 1986 Uesugi, F.
NEW TECHNOLOGY FOR CONNECTING ELECTRODES OF FLAT DISPLAY PANELS WITH LIGHT–SETTING INSULATION RESIN 1986 Hatada, K.
PHOTO–CVD TECHNIQUE FOR INSULATING FILM 1986 Hisamume, Y.
A CHARGE–UP PHENOMENON AND ITS PREVENTION OF AsSG 1986 Sakai, C.
ELECTRICAL CHARACTERISTICS OF TUNNEL OXIDE OF EEPROM 1986 Kobayashi, K.
FORMATION OF SUBMICRON Al LINE PATTERN BY PCM PROCESS 1986 Watanabe, K.
THERMAL BEHAVIOR OF MCZ–NTD SILICON 1986 Wakatsuki, M.
INFRARED RAPID THERMAL ANNEALING OF ION–IMPLANTED 2–INCH 1986 Tamura, A.
HETEROEPITAXIAL GROWTH OF SrO FILMS ON Si SUBSTRATES 1986 Kado, Y.
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