A New Photoluminescence Method of Characterizing the In-Depth Profile of Thermally Induced Defects in CZ-Si

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Veröffentlicht in:Conference on Solid State Devices (13 : 1981 : Tokio) Proceedings of the 13th Conference on Solid State Devices
1. Verfasser: NAKAYAMA, H. (VerfasserIn)
Weitere Verfasser: KATSURA, J. (VerfasserIn), NISHINO, T. (VerfasserIn), HAMAKAWA, Y. (VerfasserIn)
Pages:13
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Sprache:eng
Veröffentlicht: 1982
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