TWO-STEP MESA STRUCTURE GaN p-n JUNCTION DIODES WITH HIGH AVALANCHE CAPABILITY

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Bibliographische Detailangaben
Veröffentlicht in:	Symposium on Materials Science and Engineering (38. : 2019 : Tokio) Proceedings of the 38th Symposium on Materials Science and Engineering
1. Verfasser:	OHTA, H. (VerfasserIn)
Weitere Verfasser:	ASAI, N. (VerfasserIn), HORIKIRI, F. (VerfasserIn), NARITA, Y. (VerfasserIn), YOSHIDA, T. (VerfasserIn), MISHIMA, T. (VerfasserIn)
Pages:	38
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2020
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