Proton-Irradiation Influence on Current Mirror Circuit Using Verilog- A Approach Based on Experimental SOI FinFET Characteristics FinFET Characteristics

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Veröffentlicht in:	ECS Meeting (237. : 2020 : Montréal) (19.) Advanced CMOS-Compatible Semiconductor Devices 19
1. Verfasser:	Sousa, B. R. de (VerfasserIn)
Weitere Verfasser:	Agopian, P. G. D. (VerfasserIn), Martino, J. A. (VerfasserIn)
Pages:	19
Format:	UnknownFormat
Sprache:	eng
Veröffentlicht:	2020
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