| Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
|
2019 |
Uhlmann, M. Salamon, M. Arzig, N. |
| Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
|
2019 |
Galyukov, W. Fan, H. Qu, S. I. Chang, B. Kozak, G. Shaffer, A. |
| Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
|
2019 |
Chen, C. Y. Lee, J. M. Choi, D. S. Kim, M. S. Park, Y. S. Jang, W. J. Lee, LS. Yang, T. H. Kim, X. F. |
| Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
|
2019 |
Nagalyuk, T. C. Hsiao, S. Tsao, S. |
| Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
|
2019 |
.., I. Manning, G. Y. Chung, E. Sanchez, M. Dudley, T. Ailihumaer, J. Q. Guo, O. Goue, B. Raghothamachar....................... . .... |
| High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
|
2019 |
Kurashima, K. |
| Structural Strain in Single Layer Graphene Fabricated on SiC
|
2019 |
Yu, W. C. Yu, X. F. Chen, X. B. Hu, X. G. Xu, P. Jin, P. |
| Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
|
2019 |
Steiner, M. Schóler, P. Schuh, J. |
| Theory of Carbon-Vacancy Diffusion at the SiO2/4H-SiC Interface
|
2019 |
Alsnani, H. |
| DFT Calculation for Oxidation Reaction of SiC(0001)
|
2019 |
Ono, T. |
| Characterization of SiO2/SiC Near-Interface Oxide Traps with Constant-Capacitance Deep-Level Transient Spectroscopy
|
2019 |
Okada, H. |
| A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
|
2019 |
Pande, P. |
| Identification of Near-Interface Trap Distribution by Parameter Estimation
|
2019 |
Yamashita, Y. |
| Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
|
2019 |
Guo, L. |
| Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
|
2019 |
Anzalone, R. |
| Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
|
2019 |
Atem, A. Al |
| Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
|
2019 |
Beyer, J. |
| Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)
|
2019 |
Parisini, A. |
| Ultra-Fast and High-Precision Crystal Orientation Measurements of 4H-SiC
|
2019 |
Schüler, N. |
| Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
|
2019 |
Hallén, A. |
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