Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

von .., I. Manning, G. Y. Chung, E. Sanchez, M. Dudley, T. Ailihumaer, J. Q. Guo, O. Goue, B. Raghothamachar....................... . ....
Veröffentlicht in European Conference on Silicon Carbide and Related Materials (12. : 2018 : Birmingham) Silicon carbide and related materials 2018 (2019)